Related papers: Observation of strong electron dephasing in disord…
We have systematically investigated the low-temperature electron dephasing times $\tau_\phi$ in more than 40 three-dimensional polycrystalline impure metals with distinct material characteristics. In all cases, a saturation of the dephasing…
Structural, magnetic and magnetotransport properties of (Bi$_{1-x}$Eu$_x$)$_2$Se$_3$ thin films have been studied experimentally as a function of Eu content. The films were synthesized by MBE. It is demonstrated that Eu distribution is not…
Electronic quantum effects in disordered conductors are controlled by the dephasing rate of conduction electrons. This rate is expected to vanish with the temperature. We consider the very intriguing recently reported apparent saturation of…
We present field effect measurements on discontinuous 2D thin films which are composed of a sub monolayer of nano-grains of Au, Ni, Ag or Al. Like other electron glasses these systems exhibit slow conductance relaxation and memory effects.…
Here, we demonstrate an interplay between superconducting fluctuations and electron-electron interaction (EEI) by low temperature magnetotransport measurements for a set of 2D disordered TiN thin films. While cooling down the sample, a…
We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these…
The electron dephasing time $\tau_{\phi}$ in a diffusive quantum dot is calculated by considering the interaction between the electron and dynamical defects, modelled as two-level system. Using the standard tunneling model of glasses, we…
In three dimensional (3D) disordered metals, the electron-phonon (\emph{e}-ph) scattering is the sole significant inelastic process. Thus the theoretical predication concerning the electron-electron (\emph{e}-\emph{e}) scattering rate…
Thin films of the charge-ordered (CO) compound Pr$_{0.5}$Ca$_{0.5}$MnO$_{3}$ have been deposited onto (100)-oriented SrTiO$_{3}$ substrates using the Pulsed Laser Deposition technique. Magnetization and transport properties are measured…
Shape-averaged magnetoconductance (weak localization) is used for the first time to obtain the electron phase coherence time $\tau_{\phi}$ in open ballistic GaAs quantum dots. Values for $\tau_{\phi}$ in the range of temperature T from…
We theoretically investigate the charge noise and dephasing in a metallic device in close proximity to a spin incoherent Luttinger liquid with a small but finite current. The frequency dependence of the charge noise exhibits a loss of…
We report measurements of the electron dephasing time extracted from the weak localization (WL) correction to the average conductance in an open AlGaAs/GaAs quantum dot from 1 K to 13 mK. In agreement with theoretical predictions but in…
We have used symmetric normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry in the temperature range 50 - 700 mK. By Joule heating the electron gas and measuring the…
Highly porous Pt/Al thin film electrodes on yttria stabilized zirconia electrolytes were prepared by dealloying of co-sputtered Pt/Al films. The oxygen reduction capability of the resulting electrodes was analyzed in a solid oxide fuel cell…
We report the high-field superconducting properties of thin, disordered Re films via magneto-transport and tunneling density of states measurements. Films with thicknesses in the range of 9 nm to 3 nm had normal state sheet resistances of…
Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu_3Ti_4O_{12} on LaAlO_3 and SrTiO_3 substrates with or without various conducting buffer layers. The latter include…
The effects of annealing and variation of temperature on the electrical and thermoelectric properties of e-beam evaporated InSe thin films has been investigated in details. The XRD study demonstrates that the as-deposited InSe thin films…
An in situ study of deformation, fracture, and fatigue behavior of silicon as a lithium-ion battery electrode material is presented. Thin films (100-200 nm) of silicon are cycled in a half-cell configuration with lithium metal foil as…
The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric…
By studying the temperature-dependent behavior of electron thermal conductivity (k) in a 3.2 nm-thin film, we quantify the extremely confined defect-electron scattering and reveal the intrinsic phonon-electron scattering that is shared by…