Related papers: Spin Polarized Transport Through a Single-Molecule…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
We propose a quantum processor based upon single-molecule magnets and spin transfer torque described by PT-symmetric quantum mechanics. In recent years PT-symmetric Hamiltonians have been used to obtain stability thresholds of various…
We perform time-dependent simulations of spin exchange for an electron pair in laterally coupled quantum dots. The calculation is based on configuration interaction scheme accounting for spin-orbit (SO) coupling and electron-electron…
We calculate the interaction kernel K for two-dimensional diffusive electrons. The screening of the Coulomb interaction together with the Fermi statistics induces a spin selection rule for electron-electron scattering so that in leading…
We analyze spin-dependent transport through a spin-diode in the presence of spin-flip and under influence of temperature bias. The current polarization and the spin accumulation are investigated in detail by means of reduced density matrix.…
Within the simplest model of metals, namely a gas of electrons with Coulomb interactions, in the presence of a uniform background of positive charge to enforce electric neutrality of the system, we have derived a mechanism, by which the…
Magnetic field usually leads to a polarization of electron spins. It is shown that in a system of {\em strongly interacting} particles applying magnetic field may lead to an opposite effect -- depolarization of electron spins. Results of…
We utilize simulations of electron scattering by a chain of dynamical quantum spins, to analyze the interplay between the spin transfer effect and the magnetization dynamics. We show that the complex interactions between the spin-polarized…
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then…
Forbidden transitions between energy levels typically involve violation of selection rules imposed by symmetry and/or conservation laws. A nanomagnet tunneling between up and down states violates angular momentum conservation because of…
Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
It has recently been predicted that certain magnetic materials contain mobile magnetic charges or `monopoles'. Here we address the question of whether these magnetic charges and their associated currents (`magnetricity') can be directly…
We present a theoretical study of the electronic transport through single-molecule junctions incorporating a Pt6 metal cluster bound within an organic framework. We show that the insertion of this molecule between a pair of electrodes leads…
In the framework of phenomenological model we consider dynamics of a compensated collinear antiferromagnet (AFM) in the presence of spin-polarised current. The model is based on the assumption that AFM spins are localised and spin torque is…
An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
In order to understand the orbital and spin magnetization of a confined electronic system we analyze these ground state properties in the transition from a quantum dot to a quantum ring of finite thickness. The Coulomb interaction between…
We investigate the spin-resolved transport properties, such as the linear conductance and the tunnel magnetoresistance, of a double quantum dot device attached to ferromagnetic leads and look for signatures of SU(4) symmetry in the Kondo…