Related papers: Spin Polarized Transport Through a Single-Molecule…
Within the Coulomb blockade regime, our study delves into the charge, spin, and thermoelectric transport characteristics in a benzene-based molecular nano-junction using the Pauli master equation and linear response theory. The charge- and…
It is shown that a pulsed current driven through Ni nanowires provokes an irreversible magnetization reversal at a field distant from the spontaneous switching field $H_{sw}$ by $\Delta H$ of as much as 40 % of $H_{sw}$. The state of the…
Single molecular magnet (SMM) like paramagnetic molecules interacting with the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) produce a new system that differs dramatically from the properties of isolated molecules and…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium…
We present a theoretical analysis of the nonlinear bias and temperature dependence of current-voltage characteristics of a spin-valve device which is formed by connecting a quantum dot to two ferromagnetic electrodes whose magnetic moments…
Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona…
We review different electron transport methods to probe the magnetic properties, such as the magnetic anisotropy, of an individual Fe4 SMM. The different approaches comprise first and higher order transport through the molecule. Gate…
The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent…
We investigate the transfer between carrier and Mn spins due to the s-d-exchange interaction in a Mn doped bulk semiconductor within a microscopic quantum kinetic theory. We demonstrate that the spin transfer dynamics is qualitatively…
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like…
We present a theory of magnetotransport through an electronic orbital, where the electron spin interacts with a (sufficiently) large external spin via an exchange interaction. Using a semiclassical approximation, we derive a set of…
We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The…
We propose a spin polarizer device composed of a quantum dot connected to the spin polarized leads. The spin control of the current flowing through the device is entirely due to the Coulomb interactions present inside the dot. We show that…
Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the discrete charge of the electron, is the ultimate in…
Using the Keldysh formalism the tunneling current through a hybrid structure where a confined magnetic insulator (I) is sandwiched between two non-magnetic leads is calculated. The leads can be either normal metals (M) or superconductors…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
The magnetic reversal by spin-polarized current of a magnetic junction consisting of two ferromagnetic layers and a nonmagnetic spacer in between is considered. Initially, the free layer is magnetized antiparallel to the pinned layer by an…
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching.…
Few-electron systems confined in a quantum dot laterally coupled to a surrounding quantum ring in the presence of an external magnetic field are studied by exact diagonalization. The distribution of electrons between the dot and the ring is…
Spin-dependent electronic transport through a quantum dot has been analyzed theoretically in the cotunneling regime by means of the second-order perturbation theory. The system is described by the impurity Anderson Hamiltonian with…