Related papers: Narrow bandwidth interference filter-stabilized di…
We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds…
Precision applications including quantum computing and sensing, mmWave/RF generation, and metrology, demand widely tunable, ultra-low phase noise lasers. Today, these experiments employ table-scale systems with bulk-optics and isolators to…
We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power…
We report ultra-stable locking of a commercially available extended cavity diode laser to a vibration-insensitive high finesse Fabry-Perot cavity. A servo bandwidth of 2 MHz is demonstrated. The absolute stability of the diode laser after…
Generating high output powers while achieving narrow line single mode lasing are often mutual exclusive properties of commercial laser diodes. For this reason, efficient and scalable amplification of narrow line laser light is still a major…
Narrow-linewidth lasers with absolute frequency anchoring are essential for precision metrology, coherent sensing, and emerging quantum technologies beyond laboratory environments. Optical cavities and interferometers provide exceptional…
Ultra-low-noise stabilized lasers are a fundamental tool for precision quantum technologies, optical clocks, microwave and millimeter-wave generation, and fiber sensing. Existing systems rely on table-top bulk-optic components -- discrete…
We describe a simple method for measuring the residual fast phase noise of a cavity-stabilized laser using the cavity as a reference. The method is based on generating a beat note between the laser output and the strongly filtered light…
A semiconductor diode laser having a modified Littrow external resonator is described. An additional output coupling mirror in a V-shape configuration of the resonator makes the system more efficient and convenient to operate.
We present the first extended-cavity diode laser in Littrow configuration operating in the cyan wavelength range around 497 nm. The gallium-nitride based diode laser features a free-space output with up to 60 mW, operates in a single…
We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output…
We demonstrate injection-locking of 120mW laser diodes operating at 397nm. We achieve stable operation with injection powers of ~100uW and a slave laser output power of up to 110mW. We investigate the spectral purity of the slave laser…
We realize a fiber Bragg grating InGaN based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrow band fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency…
We consider the phase stability of a local oscillator (or laser) locked to a cavity QED system comprised of atoms with an ultra-narrow optical transition. The atoms are cooled to millikelvin temperatures and then released into the optical…
We present a simple method for narrowing the intrinsic Lorentzian linewidth of a commercial ultraviolet grating extended-cavity diode laser (TOPTICA DL Pro) using weak optical feedback from a long external cavity. We achieve a suppression…
We present a resonantly frequency-doubled tapered amplified semiconductor laser system emitting up to 2.6 W blue light at 400 nm. The output power is stable on both short and long timescales with 0.12% RMS relative intensity noise, and less…
Ultraviolet (UV) diode lasers are widely used in many photonics applications. But their frequency stabilization schemes are not as mature as frequency-doubling lasers, mainly due to some limitations in the UV spectral region. Here we…
We demonstrate a narrow-linewidth 780 nm laser system with up to 40 W power and a frequency modulation bandwidth of 230 MHz. Efficient overlap on nonlinear optical elements combines two pairs of phase-locked frequency components into a…
A phase modulated RF current source is applied to an injection locked diode laser operating at $780\unit{nm}$. This produces tunable phase modulated sidebands of the laser suitable for stabilizing the length of an optical transfer cavity…
The design of highly wavelength tunable semiconductor laser structures is presented. The system is based on a one dimensional photonic crystal cavity consisting of two patterned, doubly-clamped nanobeams, otherwise known as a "zipper"…