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A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…

Spintronics is a field of electronics based on using the electron spin instead of its charge. The recent advance in the manipulation of pure spin currents, i.e. angular momentum transfer not associated to conventional charge currents, has…

Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…

Computational Physics · Physics 2018-01-03 B. Thorpe , K. Kalna , F. C. Langbein , S Schirmer

We study ballistic transport of Dirac electrons through a strip in silicene, when the strip is exposed to off-resonant circularly polarized light and an electric field applied perpendicular to the silicene plane. We show that the…

Mesoscale and Nanoscale Physics · Physics 2016-06-22 Yawar Mohammadi , Borhan Arghavani Nia

The superconducting version of a diode effect has been the subject of extensive research in the past few years. So far, the focus has almost exclusively been on charge transport, but a natural question is whether it is possible to obtain…

Superconductivity · Physics 2025-08-06 Chi Sun , Johanne Bratland Tjernshaugen , Jacob Linder

We propose a ``spin-guide'' source for generation of electric currents with a high degree of spin polarization, allowing long-distance transmission of the spin-polarization. In the spin-guide scheme proposed here, a non-magnetic conducting…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 R. N. Gurzhi , A. N. Kalinenko , A. I. Kopeliovich , A. V. Yanovsky , E. N. Bogachek , Uzi Landman

We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which…

By incorporating the proper boundary conditions, we analytically derive the impulse response (or "Green's function") of a current-sensing spin detector. We also compare this result to a Monte-Carlo simulation (which automatically takes the…

Materials Science · Physics 2015-05-13 Jing Li , Ian Appelbaum

In an inhomogeneously doped magnetic semiconductor, an interplay between an equilibrium magnetization and injected nonequilibrium spin leads to the spin-voltaic effect--a spin analogue of the photo-voltaic effect. By reversing either the…

Condensed Matter · Physics 2007-05-23 Igor Zutic , Jaroslav Fabian

It is shown that magnetic bipolar transistors (MBT) can amplify currents even in the saturation regime, in which both the emitter-base and collector-base junctions are forward biased. The collector current and the current gain can change…

Other Condensed Matter · Physics 2007-05-23 Jaroslav Fabian , Igor Zutic

Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…

Materials Science · Physics 2009-11-11 A. Fert , J. -M. George , H. Jaffres , R. Mattana

Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on…

Materials Science · Physics 2011-09-23 Hanan Dery , Yang Song , Pengke Li , Igor Zutic

The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…

We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…

Mesoscale and Nanoscale Physics · Physics 2025-09-09 Shoichi Sato , Masaaki Tanaka , Ryosho Nakane

Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…

Quantum Physics · Physics 2021-12-03 Rozhin Yousefjani , Sougato Bose , Abolfazl Bayat

It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 V. L. Korenev

We show that the propagation of spin polarized carriers may be dramatically affected by {\em inhomogeneous} electric fields. Surprisingly, the spin diffusion length is found to strongly depend on the sign and magnitude of electric field…

Materials Science · Physics 2009-11-11 Dan Csontos , Sergio E. Ulloa

A slanting magnetic field is usually used to realize a slight hybridization between the spin and orbital degrees of freedom in a semiconductor quantum dot, such that the spin is manipulable by an external oscillating electric field. Here we…

Mesoscale and Nanoscale Physics · Physics 2021-07-08 Rui Li

We analyze transport of magnetization in insulating systems described by a spin Hamiltonian. The magnetization current through a quasi one-dimensional magnetic wire of finite length suspended between two bulk magnets is determined by the…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Florian Meier , Daniel Loss

Electrically-induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically-induced internal magnetic field, current-induced in-plane spin polarization is…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 N. P. Stern , S. Ghosh , G. Xiang , M. Zhu , N. Samarth , D. D. Awschalom
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