Related papers: Study of intrinsic spin and orbital Hall effects i…
The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic…
We calculate the spin Hall conductivity driven by Rashba spin-orbit interaction in $p$-type two-dimensional semiconductors in the presence of a perpendicular magnetic field. For a highly confined quantum well, the system is described by a…
We describe a new effect in semiconductor spintronics that leads to dissipationless spin-currents in paramagnetic spin-orbit coupled systems. We argue that in a high mobility two-dimensional electron system with substantial Rashba…
The Rashba spin-orbit coupling arising from structure inversion asymmetry couples spin and momentum degrees of freedom providing a suitable (and very intensively investigated) environment for spintronic effects and devices. Here we show…
The orbital Hall effect (OHE), resulting from non-trivial quantum geometry of 2D materials, has several potential advantages over the spin Hall effect (SHE), the latter being well known for its many applications in spintronics. Like the…
An extension of Drude model is proposed that accounts for spin and spin-orbit interaction of charge carriers. Spin currents appear due to combined action of the external electric field, crystal field and scattering of charge carriers. The…
The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip,…
An asymmetric triangular potential well provides the simplest model for the confinement of mobile electrons at the interface between two insulating oxides, such as LaAlO_3 and SrTiO_3 (LAO/STO). These electrons have been recently shown to…
We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the…
The orbital Hall effect (OHE) has attracted significant attention for developing energy-efficient electronic devices. However, utilizing it in fast, low-power devices requires an enhanced understanding of underlying extrinsic and intrinsic…
We derive boundary conditions for the electrically induced spin accumulation in a finite, disordered 2D semiconductor channel. While for DC electric fields these boundary conditions select spatially constant spin profiles equivalent to a…
We study spin Hall effect in a three terminal Y-shaped device in presence of tunable spin-orbit (SO) interactions via Landauer-B\"{u}ttiker formalism. We have evolved a fabrication technique for creating different angular separation between…
We derive the spin continuity equation by using the Noether's theorem. A new type of spin-tensor Hall current is found in the continuity equation. The spin-tensor Hall current is originating from the coupling of the spin-tensor and the…
We study the spatial behaviour of coherency and magnetic field in a two-orbital superconductor. The superconducting phase transition is caused here by the on-site intra-orbital attractions (negative-U Hubbard model) and inter-orbital…
Spin Hall effect (SHE), a mechanism by which materials convert a \textit{charge} current into a \textit{spin} current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However,…
A semi-classical description of the intrinsic spin-Hall effect (SHE) is presented which is relevant for a wide class of systems. A heuristic model for the SHE is developed, starting with a fully quantum mechanical treatment, from which we…
The spin Hall effect (SHE) is the conversion of charge current to spin current, and non-magnetic metals with large SHEs are extremely sought after for spintronic applications, but their rarity has stifled widespread use. Here we predict and…
In spintronics, the spin Hall effect has been widely used to generate and detect spin currents in materials with strong spin-orbit coupling such as Pt and Ta. Recently, its orbital counterpart has drawn attention as a new tool to generate…
The current-induced spin-orbit torque-based devices for magnetization switching are commonly relied on the 4d and 5d heavy metals owing to their strong spin-orbit coupling (SOC) to produce large spin current via spin Hall effect (SHE). Here…
Despite recent advances in orbitronics, the influence of disorder on the orbital Hall effect and orbital relaxation mechanisms remains poorly understood. In this work, we numerically investigate the role of disorder in orbital transport…