Related papers: Nonequilibrium 1/f Noise in Low-doped Manganite Si…
By analyzing the dissipative dynamics of a tunable gap flux qubit, we extract both sides of its two-sided environmental flux noise spectral density over a range of frequencies around $2k_BT/h \approx 1\,\rm{GHz}$, allowing for the…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
We propose a model for 1/f flux noise in superconducting devices (f is frequency). The noise is generated by the magnetic moments of electrons in defect states which they occupy for a wide distribution of times before escaping. A trapped…
Motivated by recent experiments with Josephson qubits we propose a new phenomenological model for 1/f noise due to collective excitations of interacting defects in the qubit's environment. At very low temperatures the effective dynamics of…
The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral…
State-of-the-art optical oscillators employing cryogenic reference cavities are limited in performance by the Brownian thermal noise associated with the mechanical dissipation of the mirror coatings. Recently, crystalline…
We show that 1/f noise in a two-dimensional electron gas with hopping conduction can be explained by the modulation of conducting paths by fluctuating occupancy of non-conducting states. The noise is sensitive to the structure of the…
Randomization of the trap state of defects present at the gate Si-SiO$_2$ interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/\textit{f} noise. In a previous work,…
Magnetoresistance of substituted lanthanum manganite (La0.5Eu0.5)0.7Pb0.3MnO3 in the pulse magnetic field H = 25 T was measured at different temperatures. Magnetoresistance relaxation with a characteristic time of 10 -3 s was found. It has…
Here we find the increase in 1/f noise of superconducting resonators at low temperatures to be completely incompatible with the standard tunneling model (STM) of Two Level Systems (TLS), which has been used to describe low-frequency noise…
Measurements of magnetization, specific heat, electrical resistivity, Hall effect, and magnetoresistance on single crystalline samples of LaFeAsO grown in a NaAs flux are reported. While this material is known to be a semimetal, the…
We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of…
We study the noise of the cotunneling current through one or several tunnel-coupled quantum dots in the Coulomb blockade regime. We consider the regime of weak (elastic and inelastic) cotunneling, and prove a non-equilibrium…
We present results of conductance-noise experiments on disordered films of crystalline indium oxide with lateral dimensions 2microns to 1mm. The power-spectrum of the noise has the usual 1/f form, and its magnitude increases with inverse…
We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…
Current-induced switching from metallic to insulating state is observed in phase-separated states of (La_{1-y}Pr_y)_{0.7}Ca_{0.3}MnO_3 (y=0.7) and Nd_{0.5}Ca_{0.5}Mn_{1-z}Cr_zO_3 (z=0.03) crystals. Application of magnetic fields to this…
We have measured the low frequency critical current noise in Nb/AlO$_{\mathrm{x}}$/Nb Josephson junctions. Unshunted junctions biased above the gap voltage and resistively shunted junctions biased near the critical current, $I_{c}$, have…
We report anistropy in superconducting and normal state of NiBi3 single crystals with Tc = 4.06 K. The magnetoresistance results indicate the absence of scattering usually associated with ferromagnetic metals, suggesting the absence of bulk…
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…
Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch in epitaxial magnetic tunnel junctions with MgO barriers, notably suppresses both nonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhances…