Related papers: Room temperature spin polarized magnetic semicondu…

The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC.…

The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial…

Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were…

We investigate the structure and magnetic properties of thin films of the LaCoO$_{3}$ compound. Thin films are deposited by pulsed laser deposition on various substrates in order to tune the strain from compressive to tensile. Single-phase…

Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the…

Pulse laser deposited La2/3Sr1/3MnO3 ultrathin films on SrTiO3 substrates were characterized by polar and longitudinal Kerr magneto-optical spectroscopy. An agreement between experimental and theoretical spectra was achieved for a 10.7 nm…

Room temperature ferromagnetism was observed in n-type Fe-doped In2O3 thin films deposited on c-cut sapphire substrates by pulsed laser deposition. Structure, magnetism, composition, and transport studies indicated that Fe occupied the In…

YMnO3 thin films have been grown on n - type Si substrates by nebulized spray pyrolysis in the Metal - Ferroelectric - Semiconductor (MFS) configuration. The C-V characteristics of the film in MFS structure exhibit hysteretic behavior…

We observe an unusual behavior of the spin Hall magnetoresistance (SMR) measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, which is a tensile-strained LaCoO3 (LCO) thin film with the Curie temperature Tc=85K. The SMR…

We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…

We performed magneto-optical (MO) measurements on FeTe$_{0.5}$Se$_{0.5}$ thin films grown on LaAlO$_3$ (LAO) and Yttria-stabilized zirconia (YSZ) single-crystalline substrates. These thin films show superconducting transition temperature,…

The surface spin polarization in the epitaxial films of a prototype manganite, La0.7Sr0.3MnO3, has been investigated by Scanning Tunneling Spectroscopy with ferromagnetic SP tips at room temperature. The manganite surface splits into…

Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions.…

Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb3+ ion doped…

In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…

We report on magneto-optical imaging, magnetization, Hall effect and magneto-resistance experiments in Nb/Al_2O_3/Co thin film heterostructures. The magnetic field is applied perpendicularly to the plane of the film and gives rise to abrupt…

The magnetic properties of thin-film multilayers [Fe/Py]/FeMn/Py are investigated as a function of temperature and thickness of the antiferromagnetic FeMn spacer using SQUID magnetometry. The observed behavior differs substantially for the…

Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/Al0.68Sc0.32N/4H-SiC…

We report the successful extraction of spin polarized current from the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x (x~2, TCNE: tetracyanoethylene; TC ~ 400 K, EG ~ 0.5 eV, s ~ 10-2 S/cm) and its subsequent injection…

In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. This insulating layer suffers of an electron trapping that…