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Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial…

The realization of a scalable architecture for quantum information processing is a major challenge for quantum science. A promising approach is based on emitters in nanostructures that are coupled by light. Here, we show that erbium dopants…

Quantum Physics · Physics 2022-10-31 Andreas Gritsch , Lorenz Weiss , Johannes Früh , Stephan Rinner , Andreas Reiserer

The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…

Materials Science · Physics 2009-11-11 Dale Kitchen , Anthony Richardella , Jian-Ming Tang , Michael E. Flatte , Ali Yazdani

Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control…

Materials Science · Physics 2009-11-11 A. M. Tyryshkin , J. J. L. Morton , S. C. Benjamin , A. Ardavan , G. A. D. Briggs , J. W. Ager , S. A. Lyon

This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise…

We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects,…

Mesoscale and Nanoscale Physics · Physics 2010-11-01 C. C. Escott , F. A. Zwanenburg , A. Morello

We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 A. J. Ferguson , V. C. Chan , A. R. Hamilton , R. G. Clark

To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not…

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a…

Controlled doping and understanding its underlying microscopic mechanisms is crucial for advancement of nanoscale electronic technologies, especially in semiconducting single-wall carbon nanotubes (s-SWNTs), where adsorbed counterions are…

Materials Science · Physics 2023-09-06 Klaus H. Eckstein , Tobias Hertel

We report the realization of a hybrid superconductor-quantum dot device by means of top-down nanofabrication starting from a two dimensional electron gas in a InGaAs/InAlAs semiconductor heterostructure. The quantum dot is defined by…

Mesoscale and Nanoscale Physics · Physics 2011-04-15 Fabio Deon , Vittorio Pellegrini , Francesco Giazotto , Giorgio Biasiol , Lucia Sorba , Fabio Beltram

Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel…

Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon…

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Yongjie Hu , Hugh H. O. Churchill , David J. Reilly , Jie Xiang , Charles M. Lieber , Charles M. Marcus

Dispersed impurities in diamond present a flourishing platform for research in quantum informatics, spintronics and single phonon emitters. Based on the vast pool of experimental and theoretical work describing impurity atoms in diamond, we…

Materials Science · Physics 2023-08-31 D. Propst , J. Kotakoski , E. H. Åhlgren

Quantum dots are small conductive regions in a semiconductor, containing a variable number of electrons (N=1 to 1000) that occupy well defined discrete quantum states. They are often referred to as artificial atoms with the unique property…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 T. H. Oosterkamp , T. Fujisawa , W. G. van der Wiel , K. Ishibashi , R. V. Hijman , S. Tarucha , L. P. Kouwenhoven

Images of a single-electron quantum dot were obtained in the Coulomb blockade regime at liquid He temperatures using a cooled scanning probe microscope (SPM). The charged SPM tip shifts the lowest energy level in the dot and creates a ring…

Recently, new quantum features have been observed and studied in the area of nanostructured layers. Nanograting on the surface of the thin layer imposes additional boundary conditions on the electron wave function and induces G-doping or…

Mesoscale and Nanoscale Physics · Physics 2014-02-25 A. Tavkhelidze

Experiments aiming to directly detect dark matter through particle recoils can achieve energy thresholds of $\mathcal{O}(1\,\mathrm{eV})$. In this regime, ionization signals from small-angle Compton scatters of environmental $\gamma$-rays…

Silicon detectors have gained in popularity since silicon became a widely used micro/nanoelectronic semiconductor material. Silicon detectors are used in particle physics as well as imaging for pixel based detecting systems. Over the past…

Instrumentation and Detectors · Physics 2015-03-02 Nicolas T. Fourches , Remi Chipaux