Related papers: CdZnTe:Cl crystals for X-ray computer tomography d…
The process of self-compensation in Cd0.95Zn0.05Te:Cl solid-solution crystals has been studied by annealing single crystals under a controlled Cd vapor pressure, with subsequent measurements of the Hall effect, photoluminescence, carrier…
This study explores the suitability of semi-insulating compounds, specifically (Cd,Mn)Te and (Cd,Mn)(Te,Se), as materials for room temperature X-ray and gamma-ray detectors. These compounds were grown using the Bridgman method, known for…
Bridgman CdTe and CdZnTe crystal growth, with cadmium vapor pressure control, is applied to production of semiconductor gamma radiation detectors. Crystals are highly donor doped and highly electrically conducting. Annealing in tellurium…
The process of annealing of a CdTe:Cl ingot during its cooling after growth was studied. The annealing was performed in two stages: a high-temperature stage, with an approximate equality of chlorine and cadmium vacancy concentrations…
Cd1-xZnxTe crystals with x in the range of 0.1-0.2 were grown by the high-pressure vertical Bridgman method from pre-synthesized CZT. Resistive graphite heaters were used to control the temperature profiles within the furnaces, and an argon…
High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000 - 4200 cm-2, which meets a…
Studies of n-CdZnTe crystals (photoluminescence, extrinsic photoconductivity, Hall effect, time-of-flight technique) have shown that the excess concentration of vacancies of cadmium (Vcd) is the main reason of low, as a rule, values of…
Graded composition CdxZn1-xTe films were prepared by growing several alternate layers of CdTe and ZnTe by the Isothermal Close Space Sublimation technique. The thickness of both kinds of layers was modified along the structure to produce an…
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high…
[(SnSe)$_{1+\delta}$]$_m$(NbSe$_2$) ($m$ = 1-6, 8, and 12) highly orientated crystals 1-2 mm in size and well-defined c-planes were successfully grown using CsCl/KCl flux, including the first growth of crystals with $m = 12$. The stacked…
The complexity and richness of phenomena governing alloy crystal growth can be unraveled by examining the three-dimensional atomic-level distribution of elements and impurities incorporated during growth. These species act as atomic…
Single crystals of thallium-based cuprates with the general formula Tl$_{2}$Ba$_{2}$Ca$_{n-1}$Cu$_{n}$O$_{x}$(n=1,2,3) have been grown by the flux method. The superconducting transition temperatures determined by the ac magnetic…
Thin films of Fe(1+delta)Se(1-x)Te(x) (delta ~ 0.18 & x ~ 0.5) have been successfully grown on (100) oriented single crystalline SrTiO3 and LaAlO3 substrates by pulsed laser deposition. The crystal structure was characterized by x-ray…
Various double beta decay modes of Cd, Zn and Te isotopes are explored with the help of CdTe and CdZnTe semiconductor detectors. The data set is splitted in an energy range below 1 MeV having a statistics of 134.5 g$\cdot$d and one above 1…
0.5%, 1%, 3% and 5% Ce-concentration single crystals of Tl2LiLuCl6 were grown from the melt using two zone vertical Bridgman technique. X-ray induced emission spectra showed Ce3+ emission between 370 nm and 540 nm wavelength range. Energy…
Cd1-xZnxTe (CZT) crystals are the leading semiconductors for radiation detection, but their application is limited by the high cost of detector-grade materials. High crystal costs primarily result from property non-uniformity that causes…
Studies on Fe chalcogenide superconductor using thin films grown by the PLD technique are reviewed in terms of electronic phase diagram, properties in the normal state, properties in the superconducting state, together with the comparison…
The scanning mid-IR-laser microscopy was previously demonstrated as an effective tool for characterization of different semiconductor crystals. Now the technique has been successfully applied for the investigation of CZ Si$_x$Ge$_{1-x}$---a…
Doped semiconductor crystals of solid solution $Cd_{1-x}Mn_{x}Te:Fe^{2+}$ were grown by the high-pressure Bridgman method covering the range of its existence as a zinc blende crystal structure. The concentration of Fe-impurities was…
In this paper we report the growth and superconductivity of $Na_xTaS_2$ crystals. The structural data deduced from X-ray diffraction pattern shows that the sample has the same structure as $2H-TaS_2$. A series of crystals with different…