Doped semiconductor crystals of solid solution Cd1−xMnxTe:Fe2+ were grown by the high-pressure Bridgman method covering the range of its existence as a zinc blende crystal structure. The concentration of Fe-impurities was approximately 0.001 wt.% in all studied samples. The correlations between the composition of solid solution crystals of Cd1−xMnxTe:Fe2+, band gap, lattice period and the maxima positions of the Fe2+ active ion absorption and emission spectra were found. A new theoretical model based on the principle of additivity for solid solution semiconductor materials has been used for explaining the long-wavelength ''redshift'' of absorption and luminescence bands in the spectra of Cd1−xMnxTe:Fe2+ crystals with increasing solid solution concentration. The obtained results can be used to predict the lasing range for Cd1−xMnxTe:Fe2+ crystal media (in all possible Mn concentrations), which is potentially the longest wavelength active material for mid-IR lasing.
@article{arxiv.2312.01377,
title = {Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals with linear sin-band redshift of absorption and emission spectra},
author = {Sergei Naydenov and Oleksii Kapustnyk and Igor Pritula and Nazar Kovalenko and Igor Terzin and Dmitro Sofronov and Pavel Mateichenko},
journal= {arXiv preprint arXiv:2312.01377},
year = {2025}
}