Related papers: Modeling the Field Emission Current Fluctuation in…
We measure the resistance and frequency-dependent gate capacitance of carbon nanotube (CNT) thin films in ambient, vacuum, and under low-pressure (10E-6 torr) analyte environments. We model the CNT film as an RC transmission line and show…
Using carbon nanotubes (CNTs) produced by chemical vapor deposition, we have explored different strategies for the preparation of carbon nanotube devices suited for electrical and mechanical measurements. Though the target device is a…
Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC…
Experimental evidences reported in this letter show that the gas ionization induced positive charge accumulation can lead to the electron field emission from carbon nanotubes (CNTs) in an electrode system with proper range of gap spacing,…
Large area carbon nanotube (CNT) cathodes made from yarns, films or fibers have long been promising as next generation electron sources for high power radio frequency (rf) and microwave vacuum electronic devices. However, experimental…
We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional…
Random networks of single-walled carbon nanotubes (CNTs) usually contain both metallic (m-CNTs) and semiconducting (s-CNTs) nanotubes with an approximate ratio of 1:2, which leads to a trade-off between on-conductance and on/off ratio. We…
The field emission properties of ion irradiated multiwalled carbon nanotubes (MWCNTs) and doublewalled carbon nanotubes (DWCNTs) have been studied. The carbon nanotubes synthesized by a chemical vapor deposition method were irradiated by…
We develop an analytical theory of polarization of a vertically aligned array of carbon nanotubes (NTs) in external electric field. Such arrays are commonly utilized in field-emission devices, due to the known electrostatic effect of strong…
We report on a systematic study of modulation of the field emission current from carbon nanowalls using a sharp probe as the anode in an ultrahigh vacuum system. Modulation of the local emission current was achieved by either varying the…
We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of…
High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…
New phenomenon of a weak energy localization of optical low-frequency oscillations in carbon nanotubes (CNT) is analytically predicted in the framework of continuum shell theory. This phenomenon takes place for CNTs of finite length with…
Carbon nanotubes (CNTs) make an ideal one-dimensional (1D) material platform for the exploration of exotic physical phenomena under extremely strong quantum confinement. The 1D character of electrons, phonons and excitons in individual CNTs…
The electronic spectra of long carbon nanotubes (CNTs) can, to a very good approximation, be obtained using the dispersion relation of graphene with both angular and axial periodic boundary conditions. In short CNTs one must account for the…
High frequency conductivity of hot electrons in an undoped single walled achiral carbon nanotubes (CNTs) under the influence of ac-dc driven fields is considered. We investigated semiclassically by solving the Boltzmann's transport equation…
The performance of carbon nanotube (CNT) cables, a contender for copper-wire replacement, is tied to its metallic and semi-conducting-like conductivity responses with temperature; the origin of the semi-conducting-like response however is…
A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal…
An accurate estimation of the experimental field-emission area remains a great challenge in vacuum electronics. The lack of convenient means, which can be used to measure this parameter, creates a critical knowledge gap, making it…
Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNT) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies…