Whole Device Modeling of the FuZE Sheared-Flow-Stabilized Z Pinch
Abstract
The FuZE sheared-flow-stabilized Z pinch at Zap Energy is simulated using whole-device modeling employing an axisymmetric resistive magnetohydrodynamic formulation implemented within the discontinuous Galerkin WARPXM framework. Simulations show formation of Z pinches with densities of approximately 10^22 m^-3 and total DD fusion neutron rate of 10^7 per {\mu}s for approximately 2 {\mu}s. Simulation-derived synthetic diagnostics show peak currents and voltages within 10% and total yield within approximately 30% of experiment for similar plasma mass. The simulations provide insight into the plasma dynamics in the experiment and enable a predictive capability for exploring design changes on devices built at Zap Energy.
Keywords
Cite
@article{arxiv.2401.10366,
title = {Whole Device Modeling of the FuZE Sheared-Flow-Stabilized Z Pinch},
author = {I. A. M. Datta and E. T. Meier and U. Shumlak},
journal= {arXiv preprint arXiv:2401.10366},
year = {2024}
}
Comments
8 pages, 9 figures, IAEA FEC 2023