Well-defined Fano effect in the Andreev reflection process of a parallel double-quantum-dot structure
Abstract
We investigate the Andreev reflection in the parallel double-quantum-dot structure, by considering one metallic lead and one -wave superconductor to couple to the quantum dots simultaneously. It is found that the Fano lineshhape has opportunities to appear in the linear conductance spectrum of the Andreev reflection, which can be reversed by tuning the dot level or local magnetic flux. However, the property of the Fano effect is very complicated, in comparison with the normal electron tunnelling case. This is manifested as the special Fano form of the linear-conductance expression and the interference manner among the Feynman paths. We believe that this work can be helpful for understanding the Fano interference in the Andreev reflection process.
Keywords
Cite
@article{arxiv.1812.02896,
title = {Well-defined Fano effect in the Andreev reflection process of a parallel double-quantum-dot structure},
author = {Xiao Qi Wang and Shu-Feng Zhang and Yu Han and Wei-Jiang Gong},
journal= {arXiv preprint arXiv:1812.02896},
year = {2019}
}
Comments
10 pages, 10 figures