Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion motion, the required driving current density is usually very large, which could be energy inefficient and even destroy the device due to Joule heating. Here, we propose a voltage-driven skyrmion motion approach in a skyrmion shift device made of magnetic nanowires. The high-speed skyrmion motion is realized by utilizing the voltage shift, and the average skyrmion velocity reaches up to 259 m/s under 0.45 V applied voltage. In comparison with the widely studied vertical current-driven model, the energy dissipation is three orders of magnitude lower in our voltage-driven model, for the same speed motion of skyrmions. Our approach uncovers valuable opportunities for building skyrmion racetrack memories and logic devices with both ultra-low power consumption and ultra-high processing speed, which are appealing features for future spintronic applications.
@article{arxiv.1803.05615,
title = {Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion Shift Device},
author = {Yizheng Liu and Na Lei and Chengxiang Wang and Xichao Zhang and Wang Kang and Daoqian Zhu and Yan Zhou and Xiaoxi Liu and Youguang Zhang and Weisheng Zhao},
journal= {arXiv preprint arXiv:1803.05615},
year = {2019}
}