BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range of doping densities. Predicted saturation velocities based on a simple LO-phonon emission model using an effective LO phonon energy of 120 meV show good agreement with measurements of velocity saturation in La-doped BaSnO_{3} films.. Density-dependent saturation velocity in the range of 1.6x10^{7} cm/s reducing to 2x10^{6} cm/s is predicted for {\delta}-doped BaSnO3 channels with carrier densities ranging from 10^{13} cm^{-2} to 2x10^{14} cm^{-2} respectively. These results are expected to aid the informed design of BaSnO3 as the active material for high-charge density electronic transistors.
@article{arxiv.1905.05112,
title = {Velocity Saturation in La-doped BaSnO3 Thin Films},
author = {Hareesh Chandrasekar and Junao Cheng and Tianshi Wang and Zhanbo Xia and Nicholas G. Combs and Christopher R. Freeze and Patrick B. Marshall and Joe McGlone and Aaron Arehart and Steven Ringel and Anderson Janotti and Susanne Stemmer and Wu Lu and Siddharth Rajan},
journal= {arXiv preprint arXiv:1905.05112},
year = {2019}
}