VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) \beta-Ga2O3 HJDs with PFOM >2.3 GW/cm2

Yizheng Liu; Carl Peterson; Chinmoy Nath Saha; Marko J. Tadjer; Sriram Krishnamoorthy

VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) \beta-Ga2O3 HJDs with PFOM >2.3 GW/cm2

Applied Physics 2026-05-01 v1 Materials Science

Authors: Yizheng Liu , Carl Peterson , Chinmoy Nath Saha , Marko J. Tadjer , Sriram Krishnamoorthy

Abstract

Beta-gallium oxide (\beta-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 m\Omega*cm2 class edge terminated vertical heterojunction diodes (HJDs) with e-beam/sputtered nickel oxide (NiOx) stack on epitaxial (011) \beta-Ga2O3. The power figure of merit (PFOM) of the HJD exceeds 2.3 GW/cm2. The extracted parallel plane breakdown field is > 5.3 MV/cm, which is the highest reported electric field for thick (011) \beta-Ga2O3 epitaxial drift layer.

Keywords

beta-Ga2O3 heterojunction diode breakdown voltage power figure of merit nickel oxide

Cite

@article{arxiv.2604.27262,
  title  = {VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) \beta-Ga2O3 HJDs with PFOM >2.3 GW/cm2},
  author = {Yizheng Liu and Carl Peterson and Chinmoy Nath Saha and Marko J. Tadjer and Sriram Krishnamoorthy},
  journal= {arXiv preprint arXiv:2604.27262},
  year   = {2026}
}

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