We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the mobility decreases with decreasing temperature, a characteristic due to carrier inhomogeneity in graphene. The theoretical fittings using an empirical formula of single electron tunneling indicate that electrical resistivity follows a universal curve with a scaling parameter. The scaling parameter is determined to be a measure of the fluctuations in the electron-hole puddle distribution.
@article{arxiv.1211.3807,
title = {Universal scaling of resistivity in bilayer graphene},
author = {Kalon Gopinadhan and Young Jun Shin and Hyunsoo Yang},
journal= {arXiv preprint arXiv:1211.3807},
year = {2015}
}