Uniaxially stressed germanium with fundamental direct band gap
Materials Science
2016-03-14 v1 Optics
Abstract
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain.
Keywords
Cite
@article{arxiv.1603.03454,
title = {Uniaxially stressed germanium with fundamental direct band gap},
author = {R. Geiger and T. Zabel and E. Marin and A. Gassenq and J. -M. Hartmann and J. Widiez and J. Escalante and K. Guilloy and N. Pauc and D. Rouchon and G. Osvaldo Diaz and S. Tardif and F. Rieutord and I. Duchemin and Y. -M. Niquet and V. Reboud and V. Calvo and A. Chelnokov and J. Faist and H. Sigg},
journal= {arXiv preprint arXiv:1603.03454},
year = {2016}
}
Comments
9 pages, 8 figures