Antiferromagnetic thin films typically exhibit a multi-domain state, and control of the antiferromagnetic N\'eel vector is challenging as antiferromagnetic materials are robust to magnetic perturbations. By relying on anisotropic in-plane strain engineering of epitaxial thin films of the prototypical antiferromagnetic material LaFeO3, uniaxial N\'eel vector control is demonstrated. Orthorhombic (011)- and (101)-oriented DyScO3, GdScO3 and NdGaO3 substrates are used to engineer different anisotropic in-plane strain states. The anisotropic in-plane strain stabilises structurally monodomain monoclinic LaFeO3 thin films. The uniaxial N\'eel vector is found along the tensile strained b axis, contrary to bulk LaFeO3 having the N\'eel vector along the shorter a axis, and no magnetic domains are found. Hence, anisotropic strain engineering is a viable tool for designing unique functional responses, further enabling antiferromagnetic materials for mesoscopic device technology.
@article{arxiv.2011.12056,
title = {Uniaxial N\'eel Vector Control in Perovskite Oxide Thin Films by Anisotropic Strain Engineering},
author = {K. Kjærnes and I. Hallsteinsen and R. V. Chopdekar and M. Moreau and T. Bolstad and I-H. Svenum and S. M. Selbach and T. Tybell},
journal= {arXiv preprint arXiv:2011.12056},
year = {2021}
}