In-Plane Magnetic Anisotropy In RF Sputtered Fe-N Thin Films

H. B. Nie; S. Y. Xu; C. K. Ong; Q. Zhan; D. X. Li; J. P. Wang

doi:10.1016/S0040-6090(03)00833-2

In-Plane Magnetic Anisotropy In RF Sputtered Fe-N Thin Films

Materials Science 2009-11-10 v1

Authors: H. B. Nie , S. Y. Xu , C. K. Ong , Q. Zhan , D. X. Li , J. P. Wang

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Abstract

We have fabricated Fe(N) thin films with varied N2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N2 partial pressure, Fe(N) films showed a basic bcc a-Fe structure with a preferred (110) texture. A variation of in-plane magnetic anisotropy of the Fe(N) films was observed with the changing of N component. The evolution of in-plane anisotropy in the films was attributed to the directional order mechanism. Nitrogen atoms play an important role in refining the a-Fe grains and inducing uniaxial anisotropy.

Keywords

in-plane magnetic anisotropy Fe-N thin films RF sputtering nitrogen content grain refinement

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@article{arxiv.cond-mat/0308274,
  title  = {In-Plane Magnetic Anisotropy In RF Sputtered Fe-N Thin Films},
  author = {H. B. Nie and S. Y. Xu and C. K. Ong and Q. Zhan and D. X. Li and J. P. Wang},
  journal= {arXiv preprint arXiv:cond-mat/0308274},
  year   = {2009}
}

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11 pages, 6 figures

In-Plane Magnetic Anisotropy In RF Sputtered Fe-N Thin Films

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