WTe2 is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here we demonstrate two non-monotonic changes in the electronic structure of WTe2 upon \textit{in-situ} electron doping. The first phase transition is interpreted in terms of a shear displacement of the top WTe2 layer, which realizes a local crystal structure not normally found in bulk WTe2. The second phase transition is associated with stronger interactions between the dopant atoms and the host, both through hybridization and electric field. These results demonstrate that electron-doping can drive structural and electronics changes in bulk WTe2 with implications for realizing nontrivial band structure changes in heterointerfaces and devices.
@article{arxiv.2004.07455,
title = {Two phase transitions driven by surface electron-doping in WTe$_2$},
author = {Antonio Rossi and Giacomo Resta and Seng Huat Lee and Ronald Dean Redwing and Chris Jozwiak and Aaron Bostwick and Eli Rotemberg and Sergey Y. Savrasov and Inna M. Vishik},
journal= {arXiv preprint arXiv:2004.07455},
year = {2020}
}