Two-dimensional Ga$_2$O$_3$ glass: a large scale passivation and protection material for monolayer WS$_2$
Abstract
Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, we show that the novel, ultrathin GaO glass is an ideal centimeter-scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, GaO capping of commercial grade WS monolayers outperforms hBN in both scalability and optical performance at room temperature. These properties make GaO highly suitable for large scale passivation and protection of monolayer TMDCs in functional heterostructures.
Keywords
Cite
@article{arxiv.2007.06860,
title = {Two-dimensional Ga$_2$O$_3$ glass: a large scale passivation and protection material for monolayer WS$_2$},
author = {Matthias Wurdack and Tinghe Yun and Eliezer Estrecho and Nitu Syed and Semonti Bhattacharyya and Maciej Pieczarka and Ali Zavabeti and Shao-Yu Chen and Benedikt Haas and Johannes Mueller and Qiaoliang Bao and Christian Schneider and Yuerui Lu and Michael S. Fuhrer and Andrew G. Truscott and Torben Daeneke and Elena A. Ostrovskaya},
journal= {arXiv preprint arXiv:2007.06860},
year = {2020}
}