In this paper, we systematically investigate the structural and electronic properties of twisted h-BN bilayers to understand the role of the twisting angle. Using first-principles methods with relaxation taken into account, we simulate h-BN bilayers with commensurate supercells with the smallest angle being 2.88∘ until 60∘. We find that the interlayer separation is not constant throughout each bilayer because of the various stacking patterns of AA, AA', AB, AB', and A'B throughout the layers, which also play a significant role in their unique charge redistribution. The calculations for the 110 generated structures show the existence of flat bands in several twisted h-BN bilayers, as well as the emergence of different trends in their properties as a function of the twist angle. These results are useful for establishing a systematic base line of registry-dependent relations for the development of more advanced computational methods to access incommensurate h-BN bilayers.
Cite
@article{arxiv.2503.03099,
title = {Twisting in h-BN bilayers and their angle-dependent properties},
author = {Diem Thi-Xuan Dang and Dai-Nam Le and Lilia M. Woods},
journal= {arXiv preprint arXiv:2503.03099},
year = {2025}
}