Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature.
@article{arxiv.2404.15542,
title = {Twisted MoSe2 Homobilayer Behaving as a Heterobilayer},
author = {Arka Karmakar and Abdullah Al-Mahboob and Natalia Zawadzka and Mateusz Raczyński and Weiguang Yang and Mehdi Arfaoui and Gayatri and Julia Kucharek and Jerzy T. Sadowski and Hyeon Suk Shin and Adam Babiński and Wojciech Pacuski and Tomasz Kazimierczuk and Maciej R Molas},
journal= {arXiv preprint arXiv:2404.15542},
year = {2024}
}