Twisted bilayer graphene (TBG), in which two monolayer graphene are stacked with an in-plane rotation angle, has recently become a hot topic due to unique electronic structures. TBG is normally produced in air by the tear-and-stack method of mechanical exfoliation and transferring graphene flakes, by which a sizable, millimeter-order area, and importantly clean interface between layers are hard to obtain. In this study, we resolved these problems by directly transferring the easy-to-exfoliate CVD-grown graphene on SiC substrate to graphene in a high vacuum without using any transfer assisting medium and observed electronic band modulations due to the strong interlayer coupling.
@article{arxiv.2005.01920,
title = {Twisted bilayer graphene fabricated by direct bonding in a high vacuum},
author = {Hitoshi Imamura and Anton Visikovskiy and Ryosuke Uotani and Takashi Kajiwara and Hiroshi Ando and Takushi Iimori and Kota Iwata and Toshio Miyamachi and Kan Nakatsuji and Kazuhiko Mase and Tetsuroh Shirasawa and Fumio Komori and Satoru Tanaka},
journal= {arXiv preprint arXiv:2005.01920},
year = {2020}
}