Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire size are changed. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.
@article{arxiv.1206.1283,
title = {Tuning hole mobility in InP nanowires},
author = {M. Rebello Sousa Dias and A. Picinin and V. Lopez-Richard and S. E. Ulloa and L. K. Castelano and J. P. Rino and G. E. Marques},
journal= {arXiv preprint arXiv:1206.1283},
year = {2013}
}