Trends in the valence band electronic structures of mixed uranium oxides

Kristina O Kvashnina; Piotr M Kowalski; Sergei M Butorin; Gregory Leinders; Janne Pakarinen; René Bès; Haijian Li; Marc Verwerft

doi:10.1039/c8cc05464a

Trends in the valence band electronic structures of mixed uranium oxides

Chemical Physics 2020-10-19 v1

Authors: Kristina O Kvashnina , Piotr M Kowalski , Sergei M Butorin , Gregory Leinders , Janne Pakarinen , René Bès , Haijian Li , Marc Verwerft

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Abstract

Valence band electronic structure of mixed uranium oxides (UO2, U4O9, U3O7, U3O8, UO3) has been studied by the resonant inelastic X-ray scattering (RIXS) technique at the U M5 edge and by computational methods. We show here that the RIXS technique and recorded U 5f-O 2p charge transfer excitations can be used to proof the validity of theoretical approximations

Keywords

mixed uranium oxides valence band electronic structure resonant inelastic x-ray scattering u m5 edge charge transfer excitations theoretical approximations

Cite

@article{arxiv.2010.08301,
  title  = {Trends in the valence band electronic structures of mixed uranium oxides},
  author = {Kristina O Kvashnina and Piotr M Kowalski and Sergei M Butorin and Gregory Leinders and Janne Pakarinen and René Bès and Haijian Li and Marc Verwerft},
  journal= {arXiv preprint arXiv:2010.08301},
  year   = {2020}
}

Comments

Chem Commun (2018)

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