We present a comprehensive theoretical study of the topological surface states (TSS) of Bi2Se3, a 3D topological insulator, epitaxially grown on twisted bilayer graphene (tBG). The moir\'e potential induced by tBG folds the TSS Dirac cone into the moir\'e Brillouin zone (MBZ), resulting in mini-gap openings, band flattening, and the potential emergence of secondary Dirac points. Using effective field theory, symmetry analysis, and higher-order perturbation theory, we analyze both commensurate and incommensurate twist angles, revealing significant band structure reconstruction in periodic systems and quasi-periodic effects in incommensurate ones. This work provides deep insights into the interplay between topological protection and moir\'e modulation, offering a pathway to engineer novel topological phases.
@article{arxiv.2505.02187,
title = {Topological Surface States of 3D Topological Insulator on Twisted Bilayer Graphene},
author = {Yoonkang Kim},
journal= {arXiv preprint arXiv:2505.02187},
year = {2025}
}