We use optical pump--THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi2Se3 films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for thinner films the photoexcitation changes the transport scattering rate and reduces the THz conductivity, which relaxes within 10 picoseconds (ps). For thicker films, the conductivity increases upon photoexcitation and scales with increasing both the film thickness and the optical fluence, with a decay time of approximately 5 ps as well as a much higher scattering rate. These different dynamics are attributed to the surface and bulk electrons, respectively, and demonstrate that long-lived mobile surface photo-carriers can be accessed independently below certain film thicknesses for possible optoelectronic applications.
@article{arxiv.1410.5666,
title = {Time-resolved terahertz dynamics in thin films of the topological insulator Bi$_{2}$Se$_3$},
author = {R. Valdés Aguilar and J. Qi and M. Brahlek and N. Bansal and A. Azad and J. Bowlan and S. Oh and A. J. Taylor and R. P. Prasankumar and D. A. Yarotski},
journal= {arXiv preprint arXiv:1410.5666},
year = {2015}
}