Related papers: Time-resolved terahertz dynamics in thin films of …
We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi$_2$Se$_3$. We find: 1) two contributions of mobile charge carriers to the THz conductivity immediately after…
Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation…
The recent discovery of topology-protected charge transport of ultimate thinness on surfaces of three-dimensional topological insulators (TIs) are breaking new ground in fundamental quantum science and transformative technology. Yet a…
Thermoelectric (TE) devices have been attracting increasing attention because of their ability to convert heat directly to electricity. To date, improving the TE figure of merit remains the key challenge. The advent of the topological…
Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly…
Cs$_2$AgBiBr$_6$ shows promise for solution-processable optoelectronics, such as photovoltaics, photocatalysis and X-ray detection. However, various spectroscopic studies report rapid charge carrier mobility loss in the first picosecond…
Transient reflectivity (TR) from thin films (6 - 40 nm thick) of the topological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in…
We study ultrafast magneto-photocurrents in a three-dimensional topological insulator. For this purpose, we excite (In$_r$Bi$_{1-r}$)$_2$Se$_3$ thin films with a femtosecond laser pulse in the presence of an external magnetic field…
Ultrafast carrier dynamics in the topological insulator Bi2Se3 have recently been intensively studied using a variety of techniques. However, we are not aware of any successful experiments exploiting transient absorption (TA) spectroscopy…
Several small-bandgap semiconductors are now known to have protected metallic surface states as a consequence of the topology of the bulk electron wavefunctions. The known "topological insulators" with this behavior include the important…
Although over the past number of years there have been many advances in the materials aspects of topological insulators (TI), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the…
The topological three-dimensional Dirac semimetal Cd3As2 has drawn great attention for the novel physics and promising applications in optoelectronic devices operating in the infrared and THz regimes. Among the extensive studies in the past…
Optical pump-terahertz probe spectroscopy has been used to investigate ultrafast photo-induced charge carrier transport in 3.4 $\mu$m wide graphene ribbons upon scaling the optical pump intensity. For low pump fluences, the deposited pump…
We present nonlinear optical absorption properties of pulsed laser deposited thin films of topological insulator (TI), Bi2Se3 on quartz substrate, using open aperture Z - scan technique. The saturable intensity of as-deposited thin films…
The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements,…
Understanding the ultrafast dynamics and transport of photoexcited carriers in topological insulators is crucial for the optical manipulation of spins and may shed light on the nature of topological excitons. Here we investigate…
We report on terahertz frequency-domain spectroscopy (THz-FDS) experiments in which we measure charge carrier dynamics and excitations of thin-film superconducting systems at low temperatures in the THz spectral range. The characteristics…
THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the…
The terahertz (THz) properties of ZrN thin films grown with CMOS-techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thicknesses ranging from 18 to 48 nm,…
We investigated the photoexcited carrier dynamics in Si by using optical pump and terahertz probe spectroscopy in an energy range between 2 meV and 25 meV. The formation dynamics of excitons from unbound e-h pairs was studied through the…