Thin-Film Lithium Niobate based Dual-Polarization IQ modulator for Single-Carrier 1.6 Tb/s Transmission
Applied Physics
2024-06-19 v3 Optics
Abstract
We successfully demonstrate a monolithic integrated dual-polarization (DP) IQ modulator based on thin-film lithium niobate (TFLN) platform with a silicon substrate, which consists of IQ modulators, spot-size converters (SSCs) and a polarization rotator combiner (PRC). After coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.
Keywords
Cite
@article{arxiv.2201.09730,
title = {Thin-Film Lithium Niobate based Dual-Polarization IQ modulator for Single-Carrier 1.6 Tb/s Transmission},
author = {Xuanhao Wang and Chenglin Shang and An Pan and Xingran Cheng and Tao Gui and Shuai Yuan and Chengcheng Gui and Keshuang Zheng and Peijie Zhang and Xiaolu Song and Yanbo Li and Liangchuan Li and Cheng Zeng and Jinsong Xia},
journal= {arXiv preprint arXiv:2201.09730},
year = {2024}
}