We fabricate a vertical thin-film barristor device consisting of highly doped silicon (gate), 300 nm SiO2 (gate dielectric), monolayer graphene, pentacene, and a gold top electrode. We show that the current across the device is modulated by the Fermi energy level of graphene, tuned with an external gate voltage. We interpret the device current within the thermionic emission theory, showing a modulation of the energy barrier between graphene and pentacene as large as 300meV.
@article{arxiv.1302.2711,
title = {Thin film barristor: a gate tunable vertical graphene-pentacene device},
author = {C. Ojeda-Aristizabal and W. Bao and M. S. Fuhrer},
journal= {arXiv preprint arXiv:1302.2711},
year = {2013}
}