The Reactivity of MgB2 with Common Substrate and Electronic Materials

T. He; John M. Rowell; R. J. Cava

doi:10.1063/1.1433915

The Reactivity of MgB2 with Common Substrate and Electronic Materials

Superconductivity 2009-11-07 v1

Authors: T. He , John M. Rowell , R. J. Cava

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Abstract

The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 C and 800 C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia (YSZ), MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600 C, MgB2 reacted only with SiO2 and Si. At 800 C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3.

Keywords

MgB2 reactivity substrate materials electronic materials critical temperature

Cite

@article{arxiv.cond-mat/0109370,
  title  = {The Reactivity of MgB2 with Common Substrate and Electronic Materials},
  author = {T. He and John M. Rowell and R. J. Cava},
  journal= {arXiv preprint arXiv:cond-mat/0109370},
  year   = {2009}
}

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