We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2e16 neq cm-2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes.
@article{arxiv.1612.00626,
title = {The INFN-FBK Phase-2 R{\&}D Program},
author = {Gian-Franco Dalla Betta and Maurizio Boscardin and Marco Bomben and Mirko Brianzi and Giovanni Calderini and Giovanni Darbo and Roberto Dell Orso and Andrea Gaudiello and Gabriele Giacomini and Roberto Mendicino and Marco Meschini and Alberto Messineo and Sabina Ronchin and D M S Sultan and Nicola Zorzi},
journal= {arXiv preprint arXiv:1612.00626},
year = {2016}
}