The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$
Condensed Matter
2014-08-04 v2
Abstract
Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of SiGe is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997).
Cite
@article{arxiv.cond-mat/0309082,
title = {The Hall Effect and ionized impurity scattering in Si$_{(1-x)}$Ge$_x$},
author = {P. Kinsler and W. Th. Wenckebach},
journal= {arXiv preprint arXiv:cond-mat/0309082},
year = {2014}
}
Comments
5 pages, 4 figures, 3 tables, 2 authors, and a logo. v2 improved referencing