We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
@article{arxiv.0806.4955,
title = {Hot-electron noise suppression in n-Si via the Hall effect},
author = {F. Ciccarello and S. Zammito and M. Zarcone},
journal= {arXiv preprint arXiv:0806.4955},
year = {2009}
}