The Effect of Side Traps on Ballistic Transistor in Kondo Regime
Strongly Correlated Electrons
2009-11-11 v2
Abstract
The effect of side-traps on conductance is calculated in the range of slave-boson mean field theory, especially when there are electrodes on both sides of the conductor. This corresponds to an investigation of transport properties in future ballistic transistors. An intrinsic dip as a result of the interference effect (Fano-Kondo effect) is expected to be observed as one of interesting interplays between physics and engineering devices.
Keywords
Cite
@article{arxiv.cond-mat/0608011,
title = {The Effect of Side Traps on Ballistic Transistor in Kondo Regime},
author = {Tetsufumi Tanamoto and Ken Uchida and Shinobu Fujita},
journal= {arXiv preprint arXiv:cond-mat/0608011},
year = {2009}
}
Comments
3 pages, 5 figures. 2006 International Conference on Solid State Devices and Materials (SSDM2006), Sept. 12-15, 2006, Yokohama, Japan