Vibrational Sidebands and Kondo-effect in Molecular Transistors
Strongly Correlated Electrons
2007-05-23 v1 Mesoscale and Nanoscale Physics
Abstract
Electron transport through molecular quantum dots coupled to a single vibrational mode is studied in the Kondo regime. We apply a generalized Schrieffer-Wolff transformation to determine the effective low-energy spin-spin-vibron-interaction. From this model we calculate the nonlinear conductance and find Kondo sidebands located at bias-voltages equal to multiples of the vibron frequency. Due to selection rules, the side-peaks are found to have strong gate-voltage dependences, which can be tested experimentally. In the limit of weak electron-vibron coupling, we employ a perturbative renormalization group scheme to calculate analytically the nonlinear conductance.
Cite
@article{arxiv.cond-mat/0409158,
title = {Vibrational Sidebands and Kondo-effect in Molecular Transistors},
author = {Jens Paaske and Karsten Flensberg},
journal= {arXiv preprint arXiv:cond-mat/0409158},
year = {2007}
}
Comments
4 pages