Temperature dependent electronic correlation effects in GdN
Abstract
We investigate temperature dependent electronic correlation effects in the conduction bands of Gadolinium Nitride (GdN) based on the combination of many body analysis of the multi-band Kondo lattice model and the first principles TB-LMTO bandstructure calculations. The physical properties like the quasi-particle density of states (Q-DOS), spectral density (SD) and quasi-particle bandstructure (Q-BS) are calculated and discussed. The results can be compared with spin and angle resolved inverse photoemission spectroscopy (ARIPS) of the conduction bands of GdN. A redshift of 0.34 eV of the lower band edge (T= T=0) is obtained and found in close comparison with earlier theoretical prediction and experimental value reported in the literature.
Cite
@article{arxiv.cond-mat/0606653,
title = {Temperature dependent electronic correlation effects in GdN},
author = {A. Sharma and W. Nolting},
journal= {arXiv preprint arXiv:cond-mat/0606653},
year = {2010}
}
Comments
13 pages, 8 figures, accepted for publication in Journal of Physics: Condensed Matter