The LnSbTe (Ln = Lanthanides) family, like isostructural ZrSiS type compounds, has emerged as a fertile playground for exploring the interaction of electronic correlations and magnetic ordering with the nodal line band topology. Here, we report a detailed electronic band structure investigation of TbSbTe, corroborated by electrical transport, thermodynamic, and magnetic studies. Temperature-dependent magnetic susceptibility and thermodynamic transport studies indicate the onset of antiferromagnetic ordering below TN = 5.1 K. The electronic band structure study, carried out with high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements aided with density functional theory based first-principles calculations reveals presence of nodal lines in the GammaX high symmetry direction, forming a diamond-shaped nodal plane around Gamma high symmetry point. A strongly photon energy dependent nodal feature located at the X point of the surface Brillouin zone, indicating an extended nodal line along X R direction, is also observed. This study elucidates the intricate interplay among symmetry-protected band characteristics, the influence of spin orbit coupling, magnetism, and topological properties.
@article{arxiv.2406.09054,
title = {Electronic Structure of a Nodal Line Semimetal Candidate TbSbTe},
author = {Iftakhar Bin Elius and Jacob F Casey and Sabin Regmi and Volodymyr Buturlim and Anup Pradhan Sakhya and Milo Sprague and Mazharul Islam Mondal and Nathan Valadez and Arun K Kumay and Justin Scrivens and Yenugonda Venkateswara and Shovan Dan and Tetiana Romanova and Arjun K Pathak and Krzysztof Gofryk and Andrzej Ptok and Dariusz Kaczorowski and Madhab Neupane},
journal= {arXiv preprint arXiv:2406.09054},
year = {2025}
}
Comments
23 pages, 17 figures, Supplemental Materials included