Weak near-infrared and strong terahertz excitation are applied to study excitonic Rabi splitting in (GaIn)As/GaAs quantum wells. Pronounced anticrossing behavior of the split peaks is observed for different terahertz intensities and detunings relative to the intraexcitonic heavy-hole 1s-2p-transition. At intermediate to high electric fields the splitting becomes highly asymmetric and exhibits significant broadening. A fully microscopic theory is needed to explain the experimental results. Comparisons with a two-level model reveal the increasing importance of higher excitonic states at elevated excitation levels.
@article{arxiv.1305.7084,
title = {Systematic investigation of THz-induced excitonic Rabi splitting},
author = {M. Teich and M. Wagner and D. Stehr and H. Schneider and M. Helm and G. Khitrova and H. M. Gibbs and A. C. Klettke and S. Chatterjee and M. Kira and S. W. Koch},
journal= {arXiv preprint arXiv:1305.7084},
year = {2015}
}