Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$

C. Q. Xu; X. Z. Xing; Xiaofeng Xu; L. Q. Che; Bin Chen; Xin Lu; Jianhui Dai; Z. X. Shi

doi:10.1103/PhysRevB.94.165119

Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$

Strongly Correlated Electrons 2016-10-19 v2 Superconductivity

Authors: C. Q. Xu , X. Z. Xing , Xiaofeng Xu , L. Q. Che , Bin Chen , Xin Lu , Jianhui Dai , Z. X. Shi

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Abstract

We report details of single crystal growth of stoichiometric bismuthide PtBi $_2$ whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the $c$ -axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of $a$ = $b$ =6.553 $\AA$ , $c$ =6.165 $\AA$ . The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The $T$ -dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor $\beta$ -PdBi $_2$ .

Keywords

PtBi$_2$ single crystal growth layered structure magnetization resistivity charge carriers kohler's rule

Cite

@article{arxiv.1605.08956,
  title  = {Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$},
  author = {C. Q. Xu and X. Z. Xing and Xiaofeng Xu and L. Q. Che and Bin Chen and Xin Lu and Jianhui Dai and Z. X. Shi},
  journal= {arXiv preprint arXiv:1605.08956},
  year   = {2016}
}

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5 pages, 5 figures

Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$

Abstract

Keywords

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