Symmetry-Driven Valleytronics in Single-Layer Tin Chalcogenides
Abstract
The concept of valleytronics has recently gained considerable research attention due to its intriguing physical phenomena and practical applications in optoelectronics and quantum information. In this study, by employing GW-BSE calculations and symmetry analysis, we demonstrate that single-layer orthorhombic SnS and SnSe possess high carrier mobility and exceptional excitonic effects. Especially, these materials display spontaneous linearly polarized optical selectivity, a behavior that differs from the valley-selective circular dichroism observed in the hexagonal lattices. Specifically, when subjected to a zigzag polarization of light, only the A exciton (stemming from the X valley) becomes optically active, while the B exciton (arising from the Y valley) remains dark. The armchair-polarized light triggers the opposite behavior. This selective optical excitation arises from the symmetry of the bands under mirror symmetry. Additionally, the study reveals a strong coupling between valley physics and ferroelectricity in layered tin chalcogenides, enabling the manipulation of electronic transport and exciton polarization. Layered tin chalcogenides thus emerge as promising candidates for both valleytronic and ferroelectric materials.
Cite
@article{arxiv.2401.08339,
title = {Symmetry-Driven Valleytronics in Single-Layer Tin Chalcogenides},
author = {Vo Khuong Dien and Pham Thi Bich Thao and Nguyen Thi Han and Nguyen Thanh Tien},
journal= {arXiv preprint arXiv:2401.08339},
year = {2024}
}