Suppression of secondary phase formation in Fe implanted ZnO single crystals

K. Potzger; Shengqiang Zhou; H. Reuther; K. Kuepper; G. Talut; M. Helm; J. Fassbender; J. D. Denlinger

doi:10.1063/1.2768196

Suppression of secondary phase formation in Fe implanted ZnO single crystals

Materials Science 2009-08-05 v1

Authors: K. Potzger , Shengqiang Zhou , H. Reuther , K. Kuepper , G. Talut , M. Helm , J. Fassbender , J. D. Denlinger

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Abstract

Unwanted secondary phases are one of the major problems in diluted magnetic semiconductor creation. Here, the authors show possibilities to avoid such phases in Fe implanted and postannealed ZnO(0001) single crystals. While -Fe nanoparticles are formed after such doping in as-polished crystals, high temperature (1273 K) annealing in O2 or high vacuum before implantation suppresses these phases. Thus, the residual saturation magnetization in the preannealed ZnO single crystals is about 20 times lower than for the as-polished ones and assigned to indirect coupling between isolated Fe ions rather than to clusters.

Keywords

diluted magnetic semiconductor ZnO Fe implantation secondary phases annealing saturation magnetization indirect coupling

Cite

@article{arxiv.0908.0396,
  title  = {Suppression of secondary phase formation in Fe implanted ZnO single crystals},
  author = {K. Potzger and Shengqiang Zhou and H. Reuther and K. Kuepper and G. Talut and M. Helm and J. Fassbender and J. D. Denlinger},
  journal= {arXiv preprint arXiv:0908.0396},
  year   = {2009}
}

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6 pages, 4 figures

Suppression of secondary phase formation in Fe implanted ZnO single crystals

Abstract

Keywords

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