Engineering a strongly interacting uniform qubit cluster would be a major step towards realizing a scalable quantum system for quantum sensing, and a node-based qubit register. For a solid-state system that uses a defect as a qubit, various methods to precisely position defects have been developed, yet the large-scale fabrication of qubits within the strong coupling regime at room temperature continues to be a challenge. In this work, we generate nitrogen vacancy (NV) color centers in diamond with sub-10 nm scale precision by using a combination of nanoscale aperture arrays (NAAs) with a high aspect ratio of 10 and a secondary E-beam hole pattern used as an ion-blocking mask. We perform optical and spin measurements on a small cluster of NV spins and statistically investigate the effect of the NAAs during an ion-implantation process. We discuss how this technique is effective for constructing a scalable system.
@article{arxiv.2112.00943,
title = {Sub-10 nm precision engineering of solid-state defects via nanoscale aperture array mask},
author = {Tae-yeon Hwang and Junghyun Lee and Seong-Woo Jeon and Yong-Su Kim and Young-Wook Cho and Hyang-Tag Lim and Sung Moon and Sang-Wook Han and Yong-Ho Choa and Hojoong Jung},
journal= {arXiv preprint arXiv:2112.00943},
year = {2022}
}