Structural origin of gap states in semicrystalline polymers and the implications for charge transport
Abstract
We quantify the degree of disorder in the {\pi}-{\pi} stacking direction of crystallites of a high performing semicrystalline semiconducting polymer with advanced X-ray lineshape analysis. Using first principles calculations, we obtain the density of states of a system of {\pi}-{\pi} stacked polymer chains with increasing amounts of paracrystalline disorder. We find that for an aligned film of PBTTT the paracrystalline disorder is 7.3%. This type of disorder induces a tail of trap states with a breadth of ~100 meV as determined through calculation. This finding agrees with previous device modeling and provides physical justification for the mobility edge model.
Keywords
Cite
@article{arxiv.1012.2240,
title = {Structural origin of gap states in semicrystalline polymers and the implications for charge transport},
author = {Jonathan Rivnay and Rodrigo Noriega and John E. Northrup and R. Joseph Kline and Michael F. Toney and Alberto Salleo},
journal= {arXiv preprint arXiv:1012.2240},
year = {2015}
}
Comments
Text and figures are unchanged in the new version of the file. The only modification is the addition of a funding source to the acknowledgments