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Stress modulated optical spin-injection in bulk semiconductors

Materials Science 2018-04-05 v1
Authors: Jose Luis Cabellos , Cuauhtemoc Salazar , Bernardo S. Mendoza
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Abstract

A full band-structure ab initio calculation of the degree of spin polarization (DSP) in stressed bulk Si and bulk GaAs is reported. For Si, we found that compressive stress causes the DSP signal peak to decrease slightly in magnitude and to shift to higher energies.

Keywords

spin polarization and magnetic phenomena

Cite

@article{arxiv.1804.01219,
  title  = {Stress modulated optical spin-injection in bulk semiconductors},
  author = {Jose Luis Cabellos and Cuauhtemoc Salazar and Bernardo S. Mendoza},
  journal= {arXiv preprint arXiv:1804.01219},
  year   = {2018}
}

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