Strain selectivity of SiGe wet chemical etchants

M. Stoffel; A. Malachias; T. Merdzhanova; F. Cavallo; G. Isella; D. Chrastina; H. von Kaenel; A. Rastelli; O. G. Schmidt

Strain selectivity of SiGe wet chemical etchants

Materials Science 2008-01-29 v1 Other Condensed Matter

Authors: M. Stoffel , A. Malachias , T. Merdzhanova , F. Cavallo , G. Isella , D. Chrastina , H. von Kaenel , A. Rastelli , O. G. Schmidt

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Abstract

We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain selectivity, i.e. the etching rates do not depend on the actual strain state in the SiGe films. Instead, for the NH4OH:H2O2 solution, the rates are primarily determined by the Ge content. Finally, we show that both etchants are isotropic with no preferential etching of particular facets.

Keywords

sige wet chemical etching strain selectivity etching rate ge content isotropic etching semiconductor processing

Cite

@article{arxiv.0801.4211,
  title  = {Strain selectivity of SiGe wet chemical etchants},
  author = {M. Stoffel and A. Malachias and T. Merdzhanova and F. Cavallo and G. Isella and D. Chrastina and H. von Kaenel and A. Rastelli and O. G. Schmidt},
  journal= {arXiv preprint arXiv:0801.4211},
  year   = {2008}
}

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13 pages, 4 figures, regular paper

Strain selectivity of SiGe wet chemical etchants

Abstract

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