We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
@article{arxiv.1801.09833,
title = {Strain engineering of the silicon-vacancy center in diamond},
author = {Srujan Meesala and Young-Ik Sohn and Benjamin Pingault and Linbo Shao and Haig A. Atikian and Jeffrey Holzgrafe and Mustafa Gundogan and Camille Stavrakas and Alp Sipahigil and Cleaven Chia and Michael J. Burek and Mian Zhang and Lue Wu and Jose L. Pacheco and John Abraham and Edward Bielejec and Mikhail D. Lukin and Mete Atature and Marko Loncar},
journal= {arXiv preprint arXiv:1801.09833},
year = {2018}
}